Submicron lateral scaling of HBTs and other vertical-transport devices: towards THz bandwidths
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چکیده
|With appropriate device structures, combined lithographic and epitaxial scaling of HBTs, RTDs and Schottky diodes results in rapid increases in device bandwidths. 0.1 1m InGaAs RTDs have oscillated at 650 GHz, Submicron heterojunction bipolar transistors (HBTs) fabricated with substrate transfer processes have obtained 21 dB unilateral power gain at 100 GHz; if extrapolated at -20 dB/decade, this corresponds to a 1.1 THz power-gain cuto® frequency. HBT currentgain cuto® frequencies as high as 300 GHz have been obtained.
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تاریخ انتشار 2000